GaN 에피택셜 웨이퍼
(69)
Fe는 GaN 기판 Resistivity > 106 Ω·Cm RF 장치에게 도핑했습니다
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... 더보기
➤ 방문 웹사이트
사파이어 빛 SSP 플랫 사파이어 위의 625 um 내지 675 um 4 인치 청색 LED GaN 에피택셜 웨이퍼
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... 더보기
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GaN 2 인치 갈륨 나이트라이드 단일 크리스탈 기판
가격: Negotiable
MOQ: 1
배달 시간: Negotiable
상표: Ganova
하이 라이트:GaN Gallium Nitride Single Crystal Substrate, 2inch Gallium Nitride Single Crystal Substrate
Un-Doped Freestanding GaN Substrate 1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium... 더보기
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싱글 크리스탈 가인 에피 웨이퍼 갈륨 나트라이드 기판 4 인치
가격: Negotiable
MOQ: 1
배달 시간: Negotiable
상표: Ganova
하이 라이트:single crystal gan epi wafer, 4 Inch gan epi wafer, single crystal gan substrate
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... 더보기
➤ 방문 웹사이트
4 인치 Fe 도핑 된 독립 GaN 기판 갈륨 나이트라이드
가격: Negotiable
MOQ: 1
배달 시간: Negotiable
상표: Ganova
하이 라이트:4 Inch gan substrate, Fe Doped gan substrate, Freestanding gan substrate
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... 더보기
➤ 방문 웹사이트
625um ~ 675um 4 인치 블루 LED 갈륨 나이트라이드 GaN 사피어 에피타시얼 웨이퍼
가격: Negotiable
MOQ: 5
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:625um gan epi wafer, 675um gan epi wafer, 4 inch gan epitaxial wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optica... 더보기
➤ 방문 웹사이트
LED 레이저 PIN 장치에 대한 사피어 에피타క్సి얼 웨이퍼에 2 ′′ 6 인치 N 타입 GaN
가격: Negotiable
MOQ: 5
배달 시간: 3-4 weeks
하이 라이트:2inch gan epi wafer, 6inch gan epi wafer, N Type gan epi wafer
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... 더보기
➤ 방문 웹사이트
고전압 고주파 칩 생산에 필수적인 GaN 에피타క్సి얼 웨이퍼
가격: Negotiable
MOQ: 5
배달 시간: 3-4 weeks
상표: Ganova
하이 라이트:Chip Production gan epi wafer, Chip Production GaN Epitaxial Wafers, Chip Production GaN epi-wafers
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... 더보기
➤ 방문 웹사이트
5 X 10 mm2 M 표면 GaN 에피택셜 웨이퍼 두께 325um 375um
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:5 X 10.5 mm2 GaN Epitaxial Wafer, 325um gan gallium nitride wafer, GaN Epitaxial Wafer 375um
5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power device... 더보기
➤ 방문 웹사이트
4인치 N형 UID 도핑된 GaN 사파이어 웨이퍼 SSP 비저항>0.5 Ω cm LED, 레이저, PIN 에피택셜 웨이퍼
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
4 inch N-type UID-doped GaN on sapphire wafer SSP resistivity＞0.5 Ω cm LED, laser, PIN epitaxial wafer For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other gr... 더보기
➤ 방문 웹사이트
4인치 청색 LED GaN 에피택셜 웨이퍼 C 평면 편평한 사파이어
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:Blue LED GaN Epitaxial Wafer, 4 Inch led wafer, GaN Epitaxial Wafer C Plane
4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP C Plane (0001) Off Angle Toward M-Axis 0.2 ± 0.1° 4 inch Blue LED GaN epitaxial wafer on sapphire SSP Using blue radiation in LED technology offers two specific advantages – one, it consumes lesser power, two, it is more efficient in terms of light... 더보기
➤ 방문 웹사이트
375um GaN 에피택셜 웨이퍼 프리 스탠딩 U-GaN SI-GaN 기판
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:375um GaN Epitaxial Wafer, gallium nitride wafer UKAS, GaN Epitaxial Wafer 50.8mm
350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview The standard in semiconductor material industry specifies the method for testing the sur... 더보기
➤ 방문 웹사이트
12.5 밀리미터 2 인치 홀로 서 있는 엔 GaN epi 웨이퍼 Si는 도핑했습니다
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:12.5mm gan epi wafer, 2inch gallium nitride wafer, 2Inch gan epi wafer
(1- 100) ±0.1o, 12.5 ± 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Growth of 1-μm-thick Si-doped GaN films was performed by PSD with pulsed magnetron sputteri... 더보기
➤ 방문 웹사이트
두께 370um 430um 2 인치 GaN Epi 웨이퍼 치수 50mm
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:2 Inch GaN Epi Wafer, 370um single crystal wafer, 430um GaN Epi Wafer
Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview The most common method, metal organic chemical vapor deposition (MOCVD), inherently... 더보기
➤ 방문 웹사이트
5x10mm2 GaN 에피택셜 웨이퍼 비도핑 SI 유형
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:GaN Epitaxial Wafer SI Type, 5x10.5mm2 gan epi wafer, 5x10.5mm2 GaN Epitaxial Wafer
5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride is a semiconductor technology used for high power, hig... 더보기
➤ 방문 웹사이트
단결정 갈륨 질화물 반도체 웨이퍼 TTV 10um
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:Single Crystal Semiconductor Wafer, TTV 10um epi wafer, Gallium Nitride Semiconductor Wafer
5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms < 0.2 nm), controlled surface orientation, and controlled atomic steps surfaces. Surface quality suitable for epi... 더보기
➤ 방문 웹사이트
갈륨 나이트라이드 반도체 웨이퍼 325 um 375 um Ｃ 비행기
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:Gallium Nitride Semiconductor Wafer, C Plane gan epi wafer, Semiconductor Wafer 325um
2-inch Free-standing SI-GaN Substrates An epitaxial wafer (also called epi wafer, epi-wafer, or epiwafer) is a wafer of semiconducting material made by epitaxial growth (epitaxy) for use in photonics, microelectronics, spintronics, or photovoltaics. Thin Epi wafers are commonly used for leading edge... 더보기
➤ 방문 웹사이트
5x10mm2 Sp 페이스 Gan 에피택셜 웨이퍼 유엔 도핑된 Si 유형 Gan 단결정 기판
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:5x10.5mm2 GaN Epitaxial Wafer, Un Doped Epitaxial Wafer ISO, SP Face GaN Epitaxial Wafer
5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Different Types of Generative Adversarial Networks (GANs) DC GAN – It is a Deep convolutional GAN. ... Conditional GAN and Unconditional GAN (CGAN) – Condi... 더보기
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유엔 도핑된 앤형 갈륨-질소 단결정체 기판 5x10mm2 Ｍ 표면
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:GaN Single Crystal Substrate, Gallium Nitride N Type Wafer, Single Crystal Substrate 5x10.5mm2
5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Various physical aspects and potential applications of the laser-induced separation of GaN epilayers from their sapphire substrate are reviewed. The effect of short l... 더보기
➤ 방문 웹사이트
4-Inch Mg-Doped GaN/Sapphire Substrates SSP Resistivity~10Ω cm LED Laser PIN Epitaxial Wafer
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio energy amplification. It offers a number of benefits over silicon, including a higher breakdown voltage and better perfo... 더보기
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