세벌 공정 가스와 150 밀리미터 급속 열 처리 시스템
가격: Negotiable
MOQ: 1
배달 시간: 8-10week days
상표: GaNova
하이 라이트:150mm Rapid Thermal Annealing System, desktop rapid thermal processing equipment, Wafer Rapid Thermal Annealing System
RTP-150RL Rapid Thermal Annealing System with Three Sets Process Gases RTP-150RL: Is in the protection atmosphere of the desktop manual rapid annealing system, with infrared visible light heating single piece Wafer or sample, short process time, high temperature control precision, suitable for 2-6 i... 더보기
➤ 방문 웹사이트
급속한 열처리 RTP-SA-8로 생산성을 높여라
가격: Negotiable
MOQ: Negotiable
배달 시간: 3 month
상표: Ganova
1.Basic configuration of equipment system 1.1outline The Rapid Thermal Processing is a vertical semi-automatic 8-inch wafer rapid annealing furnace, which uses two layers of infrared halogen lamps as heat sources for heating. The internal quartz cavity is insulated and insulated, and the outer shell... 더보기
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Fe는 GaN 기판 Resistivity > 106 Ω·Cm RF 장치에게 도핑했습니다
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... 더보기
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사파이어 빛 SSP 플랫 사파이어 위의 625 um 내지 675 um 4 인치 청색 LED GaN 에피택셜 웨이퍼
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... 더보기
➤ 방문 웹사이트
JDCD08-001-006 6 인치 씨 플레인 사파이어 기판 웨이퍼
가격: Negotiable
MOQ: Negotiable
배달 시간: Negotiable
JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... 더보기
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2 인치 GaN에 실리콘 HEMT 에피 웨이퍼에 전력 장치
가격: Negotiable
MOQ: 5
배달 시간: Negotiable
상표: Ganova
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... 더보기
➤ 방문 웹사이트
5 X 10 mm2 M 표면 GaN 에피택셜 웨이퍼 두께 325um 375um
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:5 X 10.5 mm2 GaN Epitaxial Wafer, 325um gan gallium nitride wafer, GaN Epitaxial Wafer 375um
5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power device... 더보기
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4인치 N형 UID 도핑된 GaN 사파이어 웨이퍼 SSP 비저항>0.5 Ω cm LED, 레이저, PIN 에피택셜 웨이퍼
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
4 inch N-type UID-doped GaN on sapphire wafer SSP resistivity＞0.5 Ω cm LED, laser, PIN epitaxial wafer For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other gr... 더보기
➤ 방문 웹사이트
4인치 청색 LED GaN 에피택셜 웨이퍼 C 평면 편평한 사파이어
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:Blue LED GaN Epitaxial Wafer, 4 Inch led wafer, GaN Epitaxial Wafer C Plane
4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP C Plane (0001) Off Angle Toward M-Axis 0.2 ± 0.1° 4 inch Blue LED GaN epitaxial wafer on sapphire SSP Using blue radiation in LED technology offers two specific advantages – one, it consumes lesser power, two, it is more efficient in terms of light... 더보기
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375um GaN 에피택셜 웨이퍼 프리 스탠딩 U-GaN SI-GaN 기판
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:375um GaN Epitaxial Wafer, gallium nitride wafer UKAS, GaN Epitaxial Wafer 50.8mm
350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview The standard in semiconductor material industry specifies the method for testing the sur... 더보기
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4인치 Fe-doped Freestanding GaN Substrate 갈륨 나이트라이드 서브스트레이트
가격: Negotiable
MOQ: 1
배달 시간: Negotiable
상표: Ganova
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... 더보기
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4 인치 Fe 도핑 된 독립 GaN 기판 갈륨 나이트라이드
가격: Negotiable
MOQ: 1
배달 시간: Negotiable
상표: Ganova
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... 더보기
➤ 방문 웹사이트
2 인치 GaN에 실리콘 HEMT 에피 웨이퍼에 전력 장치
가격: Negotiable
MOQ: 5
배달 시간: Negotiable
상표: Ganova
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... 더보기
➤ 방문 웹사이트
2인치 비도핑된 자유자재 GaN 기판
가격: Negotiable
MOQ: 1
배달 시간: Negotiable
상표: Ganova
1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium nitride crystals are grown. Gallium... 더보기
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Sn 도핑 Ga2O3 웨이퍼 단결정 기판 10x10mm2
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:Sn Doping Ga2O3 Wafer, 0.8mm Gallium Oxide wafer, Ga2O3 Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Among these different phases of Ga2O3, the orthorhombic β-gallia stru... 더보기
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일 측면 닦은 Ga2O3 웨이퍼 단결정체 기판
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:Side Polished Ga2O3 Wafer, 0.6mm gallium nitride substrate, Ga2O3 Wafer UKAS
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Oxide (Ga2O3) is emerging as a viable candidate for certain c... 더보기
➤ 방문 웹사이트
0.6 밀리미터 0.8 밀리미터 Ga2O3은 결정 기판 한 개의 끝마무리를 선발합니다
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:Ga2O3 Single Crystal Substrate, Gallium Oxide wafer 0.6mm, 0.8mm Single Crystal Substrate
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Gallium Nitride (GaN) substrate is a high-quality single-crystal subs... 더보기
➤ 방문 웹사이트
JDCD04-001-007 10x10mm2(010)Sn 도핑 독립형 Ga2O3 단결정 기판 제품 등급 단일 연마
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 1.53E+18Ω/cm-3 Optoelectronic devices, insulating layers of semiconductor materials, and UV filters While silicon-based devices have been able to p... 더보기
➤ 방문 웹사이트
150.0 밀리미터 에피인 +0mm/-0.2mm SiC는 어떤 2차 플래트 3 밀리미터도 웨이퍼로 만들지 않습니다
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:150.0 mm SiC Epitaxial Wafer, silicon carbide wafer 3mm, SiC Epitaxial Wafer No Secondary Flat
JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then grown on top of this substrate to create an epi-wafer. Today, the semiconductor industry is expanding at a rapid rate, w... 더보기
➤ 방문 웹사이트
47.5 밀리미터 ± 1.5 밀리미터 SiC 에피택셜 웨이퍼 150.0 밀리미터 +0mm/-0.2mm은 to<11-20>±1을 평행시킵니다'
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:446mm SiC Epitaxial Wafer, 4 H epitaxial silicon wafer, UKAS SiC Epitaxial Wafer
47.5 mm ± 1.5 mm SiC Epitaxial Wafer 150.0 mm +0mm/-0.2mm Parallel to±1° JDCD03-001-003 Overview Currently, there are two main types of SiC wafers. The first type is the polished wafer, which is a single silicon carbide disc. It is made of high-purity SiC crystals, and can be 100mm or 150mm in diame... 더보기
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