부스트 프로덕션 급속한 열처리 RTP-SA-8 앙일링 시스템
가격: Negotiable
MOQ: Negotiable
배달 시간: 3 month
상표: Ganova
하이 라이트:Boost Production Rapid Thermal Processing, Rapid Thermal Processing Annealing System
1.Basic configuration of equipment system 1.1outline The Rapid Thermal Processing is a vertical semi-automatic 8-inch wafer rapid annealing furnace, which uses two layers of infrared halogen lamps as heat sources for heating. The internal quartz cavity is insulated and insulated, and the outer shell... 더보기
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세벌 공정 가스와 150 밀리미터 급속 열 처리 시스템
가격: Negotiable
MOQ: 1
배달 시간: 8-10week days
상표: GaNova
하이 라이트:150mm Rapid Thermal Annealing System, desktop rapid thermal processing equipment, Wafer Rapid Thermal Annealing System
RTP-150RL Rapid Thermal Annealing System with Three Sets Process Gases RTP-150RL: Is in the protection atmosphere of the desktop manual rapid annealing system, with infrared visible light heating single piece Wafer or sample, short process time, high temperature control precision, suitable for 2-6 i... 더보기
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Fe는 GaN 기판 Resistivity > 106 Ω·Cm RF 장치에게 도핑했습니다
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... 더보기
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사파이어 빛 SSP 플랫 사파이어 위의 625 um 내지 675 um 4 인치 청색 LED GaN 에피택셜 웨이퍼
가격: Negotiable
MOQ: Negotiable
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... 더보기
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JDCD08-001-006 6 인치 씨 플레인 사파이어 기판 웨이퍼
가격: Negotiable
MOQ: Negotiable
배달 시간: Negotiable
JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... 더보기
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GaN 2 인치 갈륨 나이트라이드 단일 크리스탈 기판
가격: Negotiable
MOQ: 1
배달 시간: Negotiable
상표: Ganova
하이 라이트:GaN Gallium Nitride Single Crystal Substrate, 2inch Gallium Nitride Single Crystal Substrate
Un-Doped Freestanding GaN Substrate 1, Overview of Gallium Nitride Single Crystal Substrate(GaN substrate) Gallium nitride single crystal substrate (GaN substrate)is an important component required in the preparation process of gallium nitride (GaN) crystals, and it is the substrate on which gallium... 더보기
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싱글 크리스탈 가인 에피 웨이퍼 갈륨 나트라이드 기판 4 인치
가격: Negotiable
MOQ: 1
배달 시간: Negotiable
상표: Ganova
하이 라이트:single crystal gan epi wafer, 4 Inch gan epi wafer, single crystal gan substrate
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... 더보기
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4 인치 Fe 도핑 된 독립 GaN 기판 갈륨 나이트라이드
가격: Negotiable
MOQ: 1
배달 시간: Negotiable
상표: Ganova
하이 라이트:4 Inch gan substrate, Fe Doped gan substrate, Freestanding gan substrate
Introduction to 4-inch iron doped gallium nitride (GaN) single crystal substrate 4-inch iron doped gallium nitride (GaN) single crystal substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (G... 더보기
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2인치 전력 장치 고전자 이동성 트랜지스터 에피타시얼 웨이퍼
가격: Negotiable
MOQ: 5
배달 시간: Negotiable
상표: Ganova
하이 라이트:sic epitaxial wafer 2 Inch, Power Device sic epitaxial wafer, High Electron Mobility Transistor Epitaxial Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... 더보기
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625um ~ 675um 4 인치 블루 LED 갈륨 나이트라이드 GaN 사피어 에피타시얼 웨이퍼
가격: Negotiable
MOQ: 5
배달 시간: 3-4 week days
상표: GaNova
하이 라이트:625um gan epi wafer, 675um gan epi wafer, 4 inch gan epitaxial wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED gallium nitride GaN epitaxial wafer on sapphire SSP For example, gallium nitride (GaN) is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optica... 더보기
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ALN 10*10mm2 AlN 싱글 크리스탈 400±50μM S/P/R 등급
가격: Negotiable
MOQ: 1
배달 시간: Negotiable
상표: GaNova
하이 라이트:ALN aluminum nitride wafer, 2H aluminum nitride wafer, 10*10mm2 aln wafer
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to al... 더보기
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2 인치 GaN에 실리콘 HEMT 에피 웨이퍼에 전력 장치
가격: Negotiable
MOQ: 5
배달 시간: Negotiable
상표: Ganova
하이 라이트:GaN On Silicon HEMT Epi Wafer, 2 Inch Epi Wafer, Power Device Epi Wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... 더보기
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LED 레이저 PIN 장치에 대한 사피어 에피타క్సి얼 웨이퍼에 2 ′′ 6 인치 N 타입 GaN
가격: Negotiable
MOQ: 5
배달 시간: 3-4 weeks
하이 라이트:2inch gan epi wafer, 6inch gan epi wafer, N Type gan epi wafer
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... 더보기
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1인치 AlN 싱글 크리스탈 웨이퍼 400±50μM S/P/R 등급
가격: Negotiable
배달 시간: Negotiable
상표: GaNova
하이 라이트:1 Inch aln wafer, aln wafer 1 Inch, aluminum nitride wafer aln
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to al... 더보기
➤ 방문 웹사이트
고전압 고주파 칩 생산에 필수적인 GaN 에피타క్సి얼 웨이퍼
가격: Negotiable
MOQ: 5
배달 시간: 3-4 weeks
상표: Ganova
하이 라이트:Chip Production gan epi wafer, Chip Production GaN Epitaxial Wafers, Chip Production GaN epi-wafers
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of devices and are important raw materials for semiconductor chips. Epiaxial wafer manufacturers use CVD (Chemical Vapor D... 더보기
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알가안 장벽 실리콘 HEMT 에피 웨이퍼 갈륨 나이트라이드 GaN-on-Si에 4 인치 GaN
가격: Negotiable
MOQ: 5
배달 시간: Negotiable
상표: Ganova
하이 라이트:4 inch sic epitaxial wafer, 4 inch sic epi wafer, 4 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... 더보기
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실리콘 HEMT 에피 웨이퍼 전원 장치에 6 인치 GaN 가륨 질산 GaN Si에
가격: Negotiable
MOQ: 5
배달 시간: Negotiable
상표: Ganova
하이 라이트:6 Inch sic epitaxial wafer, 6 Inch sic epi wafer, 6 Inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... 더보기
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실리콘에 GaN 보라색 레이저 2 인치 실리콘 HEMT 에피 웨이퍼 UV LD 에피 웨이퍼에 GaN
가격: Negotiable
MOQ: 5
배달 시간: Negotiable
상표: Ganova
하이 라이트:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... 더보기
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2인치 가너 실리콘 블루 LD 에피 웨이퍼 가너 블루 레이저 실리콘
가격: Negotiable
MOQ: 5
배달 시간: Negotiable
상표: Ganova
하이 라이트:2 inch sic epitaxial wafer, 2 inch sic epi wafer, 2 inch sic epi wafers
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... 더보기
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블루 LED GaN 오브 실리콘 웨이퍼 블루 레이저 GaN 에피타시얼 웨이퍼
가격: Negotiable
MOQ: 5
배달 시간: Negotiable
상표: Ganova
하이 라이트:Silicon Based Gallium Nitride Epitaxial Wafer, HEMT epitaxial wafer, 4 inch sic epitaxial wafer
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... 더보기
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