고전력 MOSFET

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ISO9001 금속산화 반도체 페트 모스페트 트랜지스터 다기능

가격: Confirm price based on product

MOQ: Negotiable

배달 시간: 2-30 days (Depends on Total Quantity)

상표: REASUNOS

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하이 라이트:ISO9001 Metal Oxide Semiconductor Fet Mosfet, Multiscene Metal Oxide Semiconductor Fet Mosfet, Multi Function Metal Oxide Semiconductor Transistor

Low On Resistance High Power MOSFET Stable Process Reliable Quality Product Description: High Power MOSFET is a widely used device type that features high current, high power and high frequency. It is mainly used in different applications such as solar inverters, high-voltage DC/DC converters, motor... 더보기

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실리콘 카바이드 MOSFET

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산업용 시 카비드 모스페트 스위칭 주파수 내구성 열성

가격: Confirm price based on product

MOQ: 600

배달 시간: 2-30 days (Depends on Total Quantity)

상표: REASUNOS

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하이 라이트:Industrial Si Carbide Mosfet, Si Carbide Mosfet Durable, Heatproof Sic Mosfet Switching Frequency

High Frequency Silicon Carbide MOSFET Device for Industrial Applications Product Description: Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) are advanced power semiconductors which provide high power and high frequency capabilities for a variety of applications, i... 더보기

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슈퍼 융합 MOSFET

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안티 EMI 슈퍼 융합 전력 모세프, 실용 N 채널 전력 모세프

가격: Confirm price based on product

MOQ: Negotiable

배달 시간: 2-30 days (Depends on Total Quantity)

상표: REASUNOS

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하이 라이트:Anti EMI Superjunction Power Mosfet, N Channel Superjunction Power Mosfet, Practical N Channel Power Mosfet

Ultra Small Package Superjunction Power MOSFET with Large EMI Margin Product Description: Super Junction MOSFETs - An Ultra Low Junction Capacitance and Ultra Small Internal Resistance Product Super Junction MOSFETs (SJ MOSFET) is a type of N-channel power MOSFETs with superior performance, mainly u... 더보기

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실리콘 카비드 SBD

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산업용 실리콘 쇼트키 장벽 수정 다이오드 다기능

가격: Confirm price based on product

MOQ: Negotiable

배달 시간: 2-30 days (Depends on Total Quantity)

상표: REASUNOS

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하이 라이트:Silicon Schottky Barrier Rectifier Diode, Schottky Barrier Rectifier Diode Multifunctional, Industry Silicon Rectifier Diode

High Power SBD Silicon Carbide for Etc with Product Description: Silicon Carbide Schottky Barrier Diode (SBD) is a new type of power semiconductor device with high power, extremely low reverse recovery current, strong anti surge current ability, and high efficiency. It is mainly used in PFC circuit,... 더보기

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고전압 MOSFET

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전기 전력 시스템 LED 드라이버 애플리케이션을 위한 초고압 MOSFET

가격: Confirm price based on product

MOQ: Negotiable

배달 시간: 2-30 days (Depends on Total Quantity)

상표: REASUNOS

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하이 라이트:전기 전력 시스템 MOSFET, LED 드라이버 애플리케이션 MOSFET

제품 설명: 고전압 MOSFET는 새로운 유형의 전력 반도체 장치입니다. 초고전압, 높은 효율성 및 낮은 전원 저항의 장점을 제공합니다.이 MOSFET는 FRD (Field-Relaxing Diode) 를 탑재하고 있습니다.이 장치는 새로운 변동성 변동 도핑 기술을 제공합니다. 이 장치는 새로운 변동성 변수 도핑 기술을 제공합니다.특수 전력 MOS 구조와 고온에서 우수한 특성그것은 널리 스마트 미터, 캐비닛 전력 공급, 산업 스위칭 전력 공급, LED 드라이버, 어댑터, 인버터 및 기타 전기 전력 시스템에서 사용됩니다.   기술... 더보기

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저전압 MOSFET

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고효율 저전력 손실 저전압 MOSFET 트렌치 / SGT 프로세스

가격: Confirm price based on product

MOQ: Negotiable

배달 시간: 2-30 days (Depends on Total Quantity)

상표: REASUNOS

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하이 라이트:트렌치 저전압 MOSFET, 고효율 저전압 MOSFET, 저전력 손실 저전압 MOSFET

제품 설명:의저전압 MOSFET고급 전력 관리 반도체로, 저전압 작업에서 높은 효율성, 신뢰성 및 성능을 요구하는 애플리케이션을 위해 특별히 설계되었습니다.이 제품은 전력 전자 산업의 기본 제품입니다, 자동차 운전자부터 최신 5G 기지 스테이션, 에너지 저장 시스템, 고주파 스위치 및 동기 교정 회로에 이르기까지 다양한 응용 프로그램을 제공합니다. 의저전압 MOSFET최첨단 기술로 만들어졌습니다.구조 과정: 트렌치/SGT(Shielded Gate Trench) 기술은 중요한 측면에서의 성능을 향상시킵니다. SGT 프로세스는 특히... 더보기

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고전력 IGBT

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충전 스파일 OBC용 고전력 IGBT 트랜지스터 다목적

가격: Confirm price based on product

MOQ: Negotiable

배달 시간: 2-30 days (Depends on Total Quantity)

상표: REASUNOS

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하이 라이트:Charging Pile High Power IGBT, OBC High Power IGBT, Multipurpose IGBT Transistor

Product Description: High Power IGBT High Power Insulated Gate Bipolar Transistor (IGBT) is a high voltage device used in many applications, such as on-board chargers, welding machines, switching power supplies, photovoltaic inverters, energy storage, and more. With a current density of 400A/cm² and... 더보기

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쇼트키 배리어 다이오드

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전원 공급 다이오드 쇼트키 장벽 안정, MBR2045CT 시크 쇼트키 수정

가격: Confirm price based on product

MOQ: Negotiable

배달 시간: 2-30 days (Depends on Total Quantity)

상표: REASUNOS

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하이 라이트:Power Supply Diode Schottky BarrierPower Supply Diode Schottky Barrier, Diode Schottky Barrier Stable, MBR2045CT Sic Schottky Rectifier

Schottky Barrier Diode Device for Switching Power Supply with Low VF Product Description: Schottky Barrier Diodes are extremely efficient and reliable semiconductor devices that offer a low forward voltage drop and low leakage for a wide variety of applications. The devices feature a low forward vol... 더보기

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고전력 반도체

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자동차용 고전력 반도체 장치 절단용 전력 전자 모듈

가격: Confirm price based on product

MOQ: 600 PCS

배달 시간: 2-30 days (Depends on Total Quantity)

상표: REASUNOS

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하이 라이트:Electronic High Power Semiconductor, Automotive High Power Semiconductor

High Power Device Temperature Resistance For High-Temperature Environments Product Description: High Power Semiconductor High Power Semiconductor is a cutting-edge power electronic module that is designed to meet the high demands of modern technology. This product is built to the National Military S... 더보기

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SIC 전력반도체

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방열 시크 실리콘 반도체 항 전압 1200V 멀티스케인

가격: Confirm price based on product

MOQ: Negotiable

배달 시간: 2-30 days (Depends on Total Quantity)

상표: REASUNOS

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하이 라이트:Heatproof Silicon Semi Conductor, Silicon Semi Conductor Anti Surge, Multiscene Silicon Carbide SiC Power Semiconductors

Product Description: High Power Semiconductor is a powerful integrated circuit module designed for a variety of applications, such as solar inverters, high-voltage DC/DC converters, motor drivers, UPS, switching power supplies, and converters. It is renowned for its high power efficiency, low Rds(ON... 더보기

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